apr . 20 1 6 . version 1. 5 magnachip semiconductor ltd . 1 m d u151 2 C single n - channel trench mosfet 30v absolute maximum ratings (ta = 25 o c) characteristics symbol rating unit drain - source voltage v dss 30 v gate - source voltage v gss 20 v continuous drain current (1) t c =25 o c i d 64 a t c = 70 o c 8 6 . 3 t a =25 o c 30.4 (3) t a = 70 o c 24.2 (3) pulsed drain current i dm 256 a power dissipation t c =25 o c p d 69.4 w t c = 70 o c 4 4.4 t a =25 o c 5.5 (3) t a = 70 o c 3.5 (3) single pulse avalanche energy (2) e as 136 mj junction and storage temperature range t j , t stg - 55~150 o c thermal characteristics characteristics symbol rating unit thermal resistance, junction - to - ambient (1) steady state r ja 22.7 o c/w thermal resistance, junction - to - case steady state r jc 1. 8 mdu151 2 single n - channel trench mosfet 30v, 100 .0 a, 3.4 m features ? v ds = 30v ? i d = 100 .0 a @v gs = 10v ? r ds(on) (max) < 3.4 m @v gs = 10v < 5.0 m @v gs = 4.5v ? 100% uil tested ? 100% rg tested general description the mdu151 2 uses advanced magnachip s mosfet technology, which provides high performance in o n - state resistance, fast switching performance and excellent quality . mdu151 2 is suitable device for dc to dc converter and general purpose applications. s s s g g s s s d d d d d d d d powerdfn 56 d g s
apr . 20 1 6 . version 1. 5 magnachip semiconductor ltd . 2 m d u151 2 C single n - channel trench mosfet 30v ordering information part number temp. range package packing quantity rohs status mdu151 2 rh - 55~150 o c power dfn 56 tape & reel 3000 units halogen free electrical characteristics (t j = 25 o c) characteristics symbol test condition min typ max unit static charac teristics drain - source breakdown voltage bv dss i d = 250a, v gs = 0v 30 - - v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.3 1.9 2.7 drain cut - off current i dss v ds = 30v, v gs = 0v - - 1 a t j =55 o c - - 5 gate leakage current i gss v gs = 20v, v ds = 0v - - 0.1 drain - source on resistance r ds(on) v gs = 10v, i d = 2 4 a - 3.0 3. 4 m t j =125 o c - 4.4 4.9 v gs = 4.5v, i d = 2 0 a - 4. 2 5.0 forward transconductance g fs v ds = 5v, i d = 10a - 42 - s dynamic characterist ics total gate charge q g(10v) v ds = 15v, i d = 2 4 a, v gs = 10v 26.5 35.3 44.1 nc total gate charge q g(4.5v) 12.6 16.8 21.0 gate - source charge q gs - 7 .0 - gate - drain charge q gd - 5.4 - input capacitance c iss v ds = 15v, v gs = 0v, f = 1.0 mhz 1615 2153 2691 pf reverse transfer capacitance c rss 157 209 261 output capacitance c oss 337 449 561 turn - on delay time t d(on) v gs = 10v, v ds = 1 5 v, i d = 2 4 a, r g = 3 . 0 - 12.2 - ns rise time t r - 12.2 - turn - off delay time t d(off) - 39.4 - fall time t f - 10.3 - gate resistance rg f=1 mhz - 1.0 2 .0 drain - source body diode characteristics source - drain diode forward voltage v sd i s = 2 4 a, v gs = 0v - 0.8 1.1 v body diode reverse recovery time t rr i f = 2 4 a, dl/dt = 100a/s - 29.1 43.7 ns body diode reverse recovery charge q rr - 21.2 31.8 nc note : 1 . surface mounted fr - 4 board by jedec (jesd51 - 7) 2 . e as is tested at starting tj = 25 , l = 0. 1 mh, i as = . 29.0 a, v dd = 27v, v gs = 10v. 3. t < 10sec.
apr . 20 1 6 . version 1. 5 magnachip semiconductor ltd . 3 m d u151 2 C single n - channel trench mosfet 30v fig.5 transfer characteristics fig.1 on - region characteristics fig.2 on - resistance variation with drain current and gate voltage fig.3 on - resistance variation with temperature fig.4 on - resistance variation with gate to source voltage fig.6 body diode forward voltage variation with source current and temperature 5 10 15 20 25 30 35 40 45 50 0 2 4 6 8 v gs = 10v v gs = 4.5v drain-source on-resistance [m ? ] i d , drain current [a] 0 1 2 3 4 5 0 3 6 9 12 15 18 v gs , gate-source voltage [v] t a =25 notes : v ds = 5v i d , drain current [a] 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 notes : i d = 24.0a t a = 25 r ds(on) [m ], drain-source on-resistance v gs , gate to source volatge [v] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40 50 4.5v 3.5v v gs = 10v 4.0v 3.0v i d , drain current [a] v ds , drain-source voltage [v] 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 1 10 100 25 -i s [a] -v sd [v] -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 notes : 1. v gs = 10 v 2. i d = 20.0 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c]
apr . 20 1 6 . version 1. 5 magnachip semiconductor ltd . 4 m d u151 2 C single n - channel trench mosfet 30v fig.7 gate charge characteristics fig.8 capacitanc e characteristics fig.9 maximum safe operating area fig.10 maximum drain current v s. case temperature fig.11 transient thermal response curve (junction - to - case) fig.1 2 transient thermal response curve (junction - to - ambient) 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 notes : duty factor, d=t 1 /t 2 peak t j = p dm * z ? jc * r ? jc (t) + t c single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z ? jc (t), thermal response t 1 , rectangular pulse duration [sec] 0 5 10 15 20 25 30 0 500 1000 1500 2000 2500 3000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0 4 8 12 16 20 24 28 32 36 40 0 2 4 6 8 10 v ds = 15v note : i d = 24a v gs , gate-source voltage [v] q g , total gate charge [nc] 25 50 75 100 125 150 0 20 40 60 80 100 limited by package i d , drain current [a] t c , case temperature [ ] 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 * notes : duty factor, d=t 1 /t 2 peak t j = p dm * z ? ja * r ? ja (t) + t a single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z ? ja (t), thermal response t 1 , rectangular pulse duration [sec] 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 1 ms 1s 10s 100 ms dc 10 ms operation in this area is limited by r ds(on) single pulse t j =max rated t c =25 i d , drain current [a] v ds , drain-source voltage [v]
apr . 20 1 6 . version 1. 5 magnachip semiconductor ltd . 5 m d u151 2 C single n - channel trench mosfet 30v package dimension p dfn56 (5x6mm) d imensions are in millimeters, unless otherwise specified dimension millimeters min m ax a 0.90 1.10 b 0.33 0.51 c 0.20 0.34 d1 4.50 5.10 d2 - 4.22 e 5.90 6.30 e1 5.50 6.10 e2 - 4.30 e 1.27bsc h 0.41 0.71 k 0.20 - l 0.51 0.71 0 12
apr . 20 1 6 . version 1. 5 magnachip semiconductor ltd . 6 m d u151 2 C single n - channel trench mosfet 30v disclaimer: the products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any product can reasonably be expected to result in a personal injury. sellers customers using or selling sellers products for use in such applications do so at their own risk and agree to full y defend and indemnify seller. magnachip reserves th e right to change the specifications and circuitry without notice at any time. magnachip does not consider responsibility for use of any circuitry other than circuitry entirely included in a magnachip product. is a registered trademark of magnac hip semiconductor ltd.
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